
BSM300D12P3E005
- Mfr.Part #
- BSM300D12P3E005
- Manufacturer
- ROHM Semiconductor
- Package/Case
- -
- Datasheet
-
BSM300D12P3E005
- Description
- SILICON CARBIDE POWER MODULE. B
- Stock
- 6
- Quality
-
- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 300A (Tc)
- Drain to Source Voltage (Vdss) :
- 1200V (1.2kV)
- FET Feature :
- Silicon Carbide (SiC)
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 14000pF @ 10V
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Module
- Power - Max :
- 1260W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- -
- Supplier Device Package :
- Module
- Vgs(th) (Max) @ Id :
- 5.6V @ 91mA
- Datasheets
- BSM300D12P3E005
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Delivery and Title: Customer is responsible for all shipping costs and any applicable surcharges.
Title and risk of loss pass to customer upon delivery of the products by Grand-ic or by
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and customer will accept delivery and pay for the Products delivered.
A delayed delivery of any part of an order does not entitle customer to cancel other deliveries or orders.
Basic Instructions
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