BSD816SNH6327
- Mfr.Part #
- BSD816SNH6327
- Manufacturer
- Infineon Technologies
- Package/Case
- -
- Datasheet
-
BSD816SNH6327
- Description
- MOSFET N-CH 20V 1.4A SOT363-6
- Stock
- 339
- Quality
-
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 1.4A (Ta)
- Drain to Source Voltage (Vdss) :
- 20 V
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 0.6 nC @ 2.5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 180 pF @ 10 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 6-VSSOP, SC-88, SOT-363
- Power Dissipation (Max) :
- 500mW (Ta)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 160mOhm @ 1.4A, 2.5V
- Supplier Device Package :
- PG-SOT363-6
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±8V
- Vgs(th) (Max) @ Id :
- 950mV @ 3.7µA
- Datasheets
- BSD816SNH6327
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Delivery and Title: Customer is responsible for all shipping costs and any applicable surcharges.
Title and risk of loss pass to customer upon delivery of the products by Grand-ic or by
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Basic Instructions
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BSD816SN L6327 | Infineon Technologies | 241 | SMALL SIGNAL N-CHANNEL MOSFET |
| BSD816SNH6327XTSA1 | Infineon Technologies | 652 | MOSFET N-CH 20V 1.4A SOT363-6 |
| BSD816SNL6327 | Infineon Technologies | 637 | SMALL SIGNAL N-CHANNEL MOSFET |
| BSD816SNL6327HTSA1 | Infineon Technologies | 195 | MOSFET N-CH 20V 1.4A SOT363-6 |
| BSD840N L6327 | Infineon Technologies | 617 | MOSFET 2N-CH 20V 0.88A SOT363 |
| BSD840NH6327XTSA1 | Infineon Technologies | 135,079 | MOSFET 2N-CH 20V 0.88A SOT363 |


















