TSM200N03DPQ33 RGG
- Mfr.Part #
- TSM200N03DPQ33 RGG
- Manufacturer
- Taiwan Semiconductor
- Package/Case
- -
- Datasheet
-
TSM200N03DPQ33 RGG
- Description
- MOSFET 2 N-CH 30V 20A 8PDFN
- Stock
- 400
- Quality
-
- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 20A (Tc)
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Standard
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 345pF @ 25V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-PowerWDFN
- Power - Max :
- 20W
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 20mOhm @ 10A, 10V
- Supplier Device Package :
- 8-PDFN (3x3)
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
- Datasheets
- TSM200N03DPQ33 RGG
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DHL eCommerce: 12-22 business days
Registered Air Mail: 15-30 business days
(For reference only)
Delivery and Title: Customer is responsible for all shipping costs and any applicable surcharges.
Title and risk of loss pass to customer upon delivery of the products by Grand-ic or by
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and customer will accept delivery and pay for the Products delivered.
A delayed delivery of any part of an order does not entitle customer to cancel other deliveries or orders.
Basic Instructions
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