GC20N65T
- Mfr.Part #
- GC20N65T
- Manufacturer
- Goford Semiconductor
- Package/Case
- -
- Datasheet
-
GC20N65T
- Description
- N650V,RD(MAX)<170M@10V,VTH2.5V~4
- Stock
- 100
- Quality
-
- Manufacturer :
- Goford Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 20A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 39 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1724 pF @ 100 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3
- Power Dissipation (Max) :
- 151W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 170mOhm @ 10A, 10V
- Supplier Device Package :
- TO-220
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250µA
- Datasheets
- GC20N65T
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Once the goods are shipped, estimated delivery time depends on your shipping option:
FedEx International Priority: 3-7 business days.
EMS:10-15 business days
DHL Express: 5-7 business days.
DHL eCommerce: 12-22 business days
Registered Air Mail: 15-30 business days
(For reference only)
Delivery and Title: Customer is responsible for all shipping costs and any applicable surcharges.
Title and risk of loss pass to customer upon delivery of the products by Grand-ic or by
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is not liable for delays in delivery. Grand-ic reserves the right to make partial shipments
and customer will accept delivery and pay for the Products delivered.
A delayed delivery of any part of an order does not entitle customer to cancel other deliveries or orders.
Basic Instructions
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