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Discrete Semiconductor Products
Transistors - IGBTs - Modules
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Transistors - IGBTs - Modules
Configuration : Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (Max) : 600 V
Current - Collector Cutoff (Max) : 250 µA
Input Capacitance (Cies) @ Vce : 6.1 nF @ 25 V
2 Records
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Part
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APTGT100DH60TG
Microchip Technology
IGBT MODULE 600V 15...
$103.7316
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RFQ
754
In-stock
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APTGT100DH60T3G
Microsemi
IGBT MODULE 600V 15...
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RFQ
354
In-stock
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APTGT100DH60TG
Microchip Technology
IGBT MODULE 600V 150A 340W SP4
Stock : 754
$103.7316
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APTGT100DH60T3G
Microsemi
IGBT MODULE 600V 150A 340W SP3
Stock : 354
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