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Discrete Semiconductor Products
Transistors - Bipolar (BJT) - RF
Current - Collector (Ic) (Max):
16A
(1)
7A
(1)
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 1A, 5V
(1)
20 @ 1A, 5V
(1)
Frequency - Transition:
100MHz ~ 500MHz
(1)
225MHz ~ 400MHz
(1)
Gain:
7dB ~ 8.5dB
(1)
8.5dB ~ 10dB
(1)
Power - Max:
140W
(1)
270W
(1)
Voltage - Collector Emitter Breakdown (Max):
60V
(1)
65V
(1)
Filter:
Transistors - Bipolar (BJT) - RF
Operating Temperature : 200°C (TJ)
Package / Case : 55JT
2 Records
Image
Part
Manufacturer
Description
Price
Stock
Action
0105-50
Microsemi
RF TRANS NPN 65V 50...
-
PDF
RFQ
504
In-stock
Get Quote
0204-125
Microsemi
RF TRANS NPN 60V 40...
-
PDF
RFQ
664
In-stock
Get Quote
0105-50
Microsemi
RF TRANS NPN 65V 500MHZ 55JT
Stock : 504
RFQ
0204-125
Microsemi
RF TRANS NPN 60V 400MHZ 55JT
Stock : 664
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