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Discrete Semiconductor Products
Transistors - Bipolar (BJT) - RF
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
(1)
onsemi
(1)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 5mA, 5V
(1)
90 @ 10mA, 5V
(1)
Frequency - Transition:
6GHz
(1)
8GHz
(1)
Gain:
10dB ~ 5.5dB @ 1.5GHz
(1)
11dB
(1)
Noise Figure (dB Typ @ f):
-
(1)
1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz
(1)
Product Status:
Active
(1)
Obsolete
(1)
Supplier Device Package:
SMCP
(1)
SSM
(1)
Filter:
Transistors - Bipolar (BJT) - RF
Operating Temperature : -
Voltage - Collector Emitter Breakdown (Max) : 10V
Power - Max : 100mW
2 Records
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Part
Manufacturer
Description
Price
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2SC5277A-2-TL-E
onsemi
RF TRANS NPN 10V 8G...
$0.2600
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RFQ
428
In-stock
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2SC5108-Y,LF
Toshiba Electronic Devices and Storage Corporation
RF TRANS NPN 10V 6G...
-
PDF
RFQ
461
In-stock
Get Quote
2SC5277A-2-TL-E
onsemi
RF TRANS NPN 10V 8GHZ SMCP
Stock : 428
$0.2600
RFQ
RFQ
2SC5108-Y,LF
Toshiba Electronic Devices and Storage Corporation
RF TRANS NPN 10V 6GHZ SSM
Stock : 461
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