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Discrete Semiconductor Products
Transistors - Bipolar (BJT) - RF
Current - Collector (Ic) (Max)：
1.5A
(1)
2.6A
(2)
DC Current Gain (hFE) (Min) @ Ic, Vce：
-
(2)
10 @ 100mA, 5V
(1)
Gain：
10dB
(1)
9dB
(2)
Operating Temperature：
-
(1)
200°C (TJ)
(2)
Filter：
Transistors - Bipolar (BJT) - RF
Power - Max : 87.5W
Supplier Device Package : M115
3 Records
Image
Part
Manufacturer
Description
Price
Stock
Action
MS2322
Microsemi
RF TRANS NPN 65V 1....
-
PDF
RFQ
432
In-stock
Get Quote
MS2341
Microsemi
RF TRANS NPN 65V 1....
-
PDF
RFQ
306
In-stock
Get Quote
MS2361
Microsemi
RF TRANS NPN 65V 1....
-
PDF
RFQ
141
In-stock
Get Quote
MS2322
Microsemi
RF TRANS NPN 65V 1.15GHZ M115
Stock : 432
RFQ
MS2341
Microsemi
RF TRANS NPN 65V 1.15GHZ M115
Stock : 306
RFQ
MS2361
Microsemi
RF TRANS NPN 65V 1.15GHZ M115
Stock : 141
RFQ
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