MT3S113TU,LF

Mfr.Part #
MT3S113TU,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package/Case
-
Datasheet
Download
Description
RF TRANS NPN 5.3V 11.2GHZ UFM
Stock
530

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - RF
Current - Collector (Ic) (Max) :
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 30mA, 5V
Frequency - Transition :
11.2GHz
Gain :
12.5dB
Mounting Type :
Surface Mount
Noise Figure (dB Typ @ f) :
1.45dB @ 1GHz
Operating Temperature :
150°C (TJ)
Package / Case :
3-SMD, Flat Lead
Power - Max :
900mW
Product Status :
Active
Supplier Device Package :
UFM
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
5.3V
Datasheets
MT3S113TU,LF

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