MS1003

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

20A

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 5A, 5V

Frequency - Transition :

136MHz ~ 175MHz

Gain :

6dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

200°C (TJ)

Package / Case :

M111

Power - Max :

270W

Product Status :

Obsolete

Supplier Device Package :

M111

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

18V