2SC5551AE-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

300mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

90 @ 50mA, 5V

Frequency - Transition :

3.5GHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

150°C (TJ)

Package / Case :

TO-243AA

Power - Max :

1.3W

Product Status :

Active

Supplier Device Package :

PCP

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

30V