TBC857B,LM

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

150 mA

Current - Collector Cutoff (Max) :

30nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 2mA, 5V

Frequency - Transition :

80MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

320 mW

Product Status :

Active

Supplier Device Package :

SOT-23-3

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

650mV @ 100mA, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50 V