2N5550TAR

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

600 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA, 5V

Frequency - Transition :

300MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max :

625 mW

Product Status :

Active

Supplier Device Package :

TO-92-3

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

140 V