2SC4213BTE85LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

300 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

350 @ 4mA, 2V

Frequency - Transition :

30MHz

Mounting Type :

Surface Mount

Operating Temperature :

125°C (TJ)

Package / Case :

SC-70, SOT-323

Power - Max :

100 mW

Product Status :

Active

Supplier Device Package :

USM

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

100mV @ 3mA, 30A

Voltage - Collector Emitter Breakdown (Max) :

20 V