2SA812B-T1B-AT

Mfr.Part #
2SA812B-T1B-AT
Manufacturer
Renesas Electronics Corporation
Package/Case
-
Datasheet
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Description
2SA812B-T1B-AT - PNP SILICON EPI
Stock
201000

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Manufacturer :
Renesas Electronics Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
100 mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
90 @ 1mA, 6V
Frequency - Transition :
180MHz
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
TO-236-3, SC-59, SOT-23-3
Power - Max :
200 mW
Product Status :
Obsolete
Supplier Device Package :
3-MINIMOLD
Transistor Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) :
50 V
Datasheets
2SA812B-T1B-AT

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