PBSS5630PA,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

6 A

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

190 @ 2A, 2V

Frequency - Transition :

80MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

3-PowerUDFN

Power - Max :

2.1 W

Product Status :

Active

Supplier Device Package :

3-HUSON (2x2)

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

350mV @ 300mA, 6A

Voltage - Collector Emitter Breakdown (Max) :

30 V