RN1427TE85LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

800 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

90 @ 100mA, 1V

Frequency - Transition :

300 MHz

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

200 mW

Product Status :

Active

Resistor - Base (R1) :

2.2 kOhms

Resistor - Emitter Base (R2) :

10 kOhms

Supplier Device Package :

S-Mini

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

50 V