DDTC113TLP-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

500nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA, 5V

Frequency - Transition :

250 MHz

Mounting Type :

Surface Mount

Package / Case :

3-UFDFN

Power - Max :

250 mW

Product Status :

Active

Resistor - Base (R1) :

1 kOhms

Resistor - Emitter Base (R2) :

-

Supplier Device Package :

X1-DFN1006-3

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 2.5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

50 V