G2012
- Mfr.Part #
- G2012
- Manufacturer
- Goford Semiconductor
- Package/Case
- -
- Datasheet
- Download
- Description
- N20V,RD(MAX)<12M@4.5V,RD(MAX)<18
- Stock
- 3000
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- Manufacturer :
- Goford Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 12A (Tc)
- Drain to Source Voltage (Vdss) :
- 20 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 2.5V, 4.5V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 29 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1255 pF @ 10 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 6-WDFN Exposed Pad
- Power Dissipation (Max) :
- 1.5W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 12mOhm @ 5A, 4.5V
- Supplier Device Package :
- 6-DFN (2x2)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±10V
- Vgs(th) (Max) @ Id :
- 1V @ 250µA
- Datasheets
- G2012
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