G08P06D3

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

8A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

25 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2972 pF @ 30 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerVDFN

Power Dissipation (Max) :

40W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

52mOhm @ 6A, 10V

Supplier Device Package :

8-DFN (3.15x3.05)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 250µA