SCT2280KEGC11
- Mfr.Part #
- SCT2280KEGC11
- Manufacturer
- ROHM Semiconductor
- Package/Case
- -
- Datasheet
- Download
- Description
- 1200V, 14A, THD, SILICON-CARBIDE
- Stock
- 281
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 14A (Tc)
- Drain to Source Voltage (Vdss) :
- 1200 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 18V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 36 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 667 pF @ 800 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 175°C
- Package / Case :
- TO-247-3
- Power Dissipation (Max) :
- 108W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 364mOhm @ 4A, 18V
- Supplier Device Package :
- TO-247N
- Technology :
- SiCFET (Silicon Carbide)
- Vgs (Max) :
- +22V, -6V
- Vgs(th) (Max) @ Id :
- 4V @ 1.4mA
- Datasheets
- SCT2280KEGC11