RM4N650TI
- Mfr.Part #
- RM4N650TI
- Manufacturer
- Rectron USA
- Package/Case
- -
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 650V 4A TO220F
- Stock
- 457
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- Manufacturer :
- Rectron USA
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 4A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 280 pF @ 50 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3 Full Pack
- Power Dissipation (Max) :
- 28.5W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 1.2Ohm @ 2.5A, 10V
- Supplier Device Package :
- TO-220F
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Datasheets
- RM4N650TI
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RM4N650IP | Rectron USA | 660 | MOSFET N-CHANNEL 650V 4A TO251 |
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