FQB27P06TM

Mfr.Part #
FQB27P06TM
Manufacturer
Fairchild Semiconductor
Package/Case
-
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 2
Stock
684

Request A Quote(RFQ)

* Contact Name:
Company:
* E-Mail:
Phone:
* Comment:
* Quantity:
* Captcha:
loading...
Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
27A (Tc)
Drain to Source Voltage (Vdss) :
60 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1400 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) :
3.75W (Ta), 120W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
70mOhm @ 13.5A, 10V
Supplier Device Package :
D2PAK (TO-263)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±25V
Vgs(th) (Max) @ Id :
4V @ 250µA
Datasheets
FQB27P06TM

Manufacturer related products

  • Fairchild Semiconductor
    TVS DIODE 15.3VWM 25.5VC DO214AC
  • Fairchild Semiconductor
    TVS DIODE 24VWM 38.9VC DO204AC
  • Fairchild Semiconductor
    TVS DIODE 13VWM 21.5VC DO204AC
  • Fairchild Semiconductor
    TVS DIODE 12VWM 19.9VC DO15
  • Fairchild Semiconductor
    TVS DIODE 33VWM 53.3VC DO15

Catalog related products